| Presentation | 1993/8/24 Charge-up measurements during ashing process Motoki Kobayashi, Takayuki Matsui, Jun Kanamori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A sensitive method for measuring the charge-up damage during ashing process was studied.We found out MNOS capacitor and Surface Charge Analyzer(SCA)are useful for measuring the small amount of charge which does not breakdown 10nm gate oxide of MOS capacitor. And the charge stored in gate electrode of MNOS capacitor and on oxide surface of SCA decrease as ashing time increases with barrel ashing system.N_2 annealing reduces the charge-up damage gradually, while ashing treatment reduces it rapidly.It is considered that reduction of the charge-up damage during ashing treatment is not caused by only thermal recovering. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ashing / charge-up / Breakdown / MOS / MNOS / SCA |
| Paper # | SDM93-83 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/8/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Charge-up measurements during ashing process |
| Sub Title (in English) | |
| Keyword(1) | ashing |
| Keyword(2) | charge-up |
| Keyword(3) | Breakdown |
| Keyword(4) | MOS |
| Keyword(5) | MNOS |
| Keyword(6) | SCA |
| 1st Author's Name | Motoki Kobayashi |
| 1st Author's Affiliation | Oki Electric Industry() |
| 2nd Author's Name | Takayuki Matsui |
| 2nd Author's Affiliation | Oki Electric Industry |
| 3rd Author's Name | Jun Kanamori |
| 3rd Author's Affiliation | Oki Electric Industry |
| Date | 1993/8/24 |
| Paper # | SDM93-83 |
| Volume (vol) | vol.93 |
| Number (no) | 192 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |