| Presentation | 1993/7/26 The dielectric breakdown characteristics of thin gate oxide prepared by trans 1,2 dichloroethylene added oxidation Kenji Yoneda, Kenji Hagiwara, Hiroshi Ohishi, Yoshihiro Todokoro, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The dielectric breakdown characteristics of thin gate oxide prepared by Trans1,2-Dichloroethylene(t-DCE)added oxidation as a substitution of 1-1-1 Trichloroethane(1-1-1 TCA)have been investigated.The t-DCE has lower ozone depletion potential(ODP=0. 0001)than the 1-1-1 TCA(ODP=0.1)and easy to replace the 1-1-1 TCA. The breakdown reliability was improved by adding.the t-DCE and the optimum.concentration was 5wt% for SC-1 pre-clean with DHF.The high quality oxide can be successfully formed by t-DCE added oxidation with minimizing the influence to ozone layer.The t-DCE is a primary candidate to replace the 1-1-1 TCA. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Trans 1,2 dichloroethylene / TDDB / Dielectric breakdown / Gate oxide |
| Paper # | SDM93-71 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The dielectric breakdown characteristics of thin gate oxide prepared by trans 1,2 dichloroethylene added oxidation |
| Sub Title (in English) | |
| Keyword(1) | Trans 1,2 dichloroethylene |
| Keyword(2) | TDDB |
| Keyword(3) | Dielectric breakdown |
| Keyword(4) | Gate oxide |
| 1st Author's Name | Kenji Yoneda |
| 1st Author's Affiliation | Matsushita Electronics Corporation() |
| 2nd Author's Name | Kenji Hagiwara |
| 2nd Author's Affiliation | Matsushita Electronics Corporation |
| 3rd Author's Name | Hiroshi Ohishi |
| 3rd Author's Affiliation | Matsushita Electronics Corporation |
| 4th Author's Name | Yoshihiro Todokoro |
| 4th Author's Affiliation | Matsushita Electronics Corporation |
| Date | 1993/7/26 |
| Paper # | SDM93-71 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |