Presentation 1993/7/26
Gettering by carbon ion implantation
Toshio Ando, Seiichi Isomae, Kaori Kondo, Yuuji Sugino, Masao Tamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Iron gettering behavior in ″low-energy″ carbon ion implantation was evaluated by ac surface photovoltage measurement.Iron concentration in silicon substrate was reduced from 3.5×10^13>cm^ -3> to 1.0×10^13>cm^-3> by carbon implantation with energy of 6 0 keV and dose of 1×10^15>cm^-2>.Lower dosage((]SY.ltoreq.(]×1 0^13>cm^-2>),however,did not getter iron contaminants effectively.Carbon atoms implanted near the silicon surface did not significantly increase defects causing the dielectric break- down of the oxide layer grown on the substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ion-implantation / gettering / carbon / iron / p-n junction / gate oxide
Paper # SDM93-70
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Conference Information
Committee SDM
Conference Date 1993/7/26(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Gettering by carbon ion implantation
Sub Title (in English)
Keyword(1) ion-implantation
Keyword(2) gettering
Keyword(3) carbon
Keyword(4) iron
Keyword(5) p-n junction
Keyword(6) gate oxide
1st Author's Name Toshio Ando
1st Author's Affiliation Device Development Center,Hitachi,Ltd.,()
2nd Author's Name Seiichi Isomae
2nd Author's Affiliation Central Research Laboratory,Hitachi,Ltd.,
3rd Author's Name Kaori Kondo
3rd Author's Affiliation Device Development Center,Hitachi,Ltd.,
4th Author's Name Yuuji Sugino
4th Author's Affiliation Kofu Manufacturing Operation,Hitachi,Ltd.,
5th Author's Name Masao Tamura
5th Author's Affiliation Optoelectronics Technology Research Laboratory
Date 1993/7/26
Paper # SDM93-70
Volume (vol) vol.93
Number (no) 172
Page pp.pp.-
#Pages 8
Date of Issue