| Presentation | 1993/7/26 Electromigration Testing of Giant-Grain Copper Interconnects under Extremely Large Current Stress Hisashi Yamada, Tsukasa Hoshi, Toshiyuki Takewaki, Tadashi Shibata, Tadahiro Ohmi, Takahisa Nita, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have evaluated electromigration resistance of giant-grain copper interconnects by using a newly-developed electromigration lifetest method under extremely large current stress.From the results of lifetests,we have demonstrated giant-grain Cu interconnects have much larger electromigration resistance than Al- alloy interconnects.Furthermore,we have discovered a new mode of electromigration failure occurring in Cu interconnects.Cu atoms move to the direction traversing the electron flow when an extremely large current stress condition is employed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Bias Sputtering / Cu Thin Film / Electromigration / Accelerated Lifetest / Interconnect / Low-energy ion bombardment |
| Paper # | SDM93-69 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electromigration Testing of Giant-Grain Copper Interconnects under Extremely Large Current Stress |
| Sub Title (in English) | |
| Keyword(1) | Bias Sputtering |
| Keyword(2) | Cu Thin Film |
| Keyword(3) | Electromigration |
| Keyword(4) | Accelerated Lifetest |
| Keyword(5) | Interconnect |
| Keyword(6) | Low-energy ion bombardment |
| 1st Author's Name | Hisashi Yamada |
| 1st Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University() |
| 2nd Author's Name | Tsukasa Hoshi |
| 2nd Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University |
| 3rd Author's Name | Toshiyuki Takewaki |
| 3rd Author's Affiliation | Laboratory for Microelectronics Research Institute of Electrical Communication,Tohoku University |
| 4th Author's Name | Tadashi Shibata |
| 4th Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University |
| 5th Author's Name | Tadahiro Ohmi |
| 5th Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University |
| 6th Author's Name | Takahisa Nita |
| 6th Author's Affiliation | Device Development Center,Hitachi Ltd. |
| Date | 1993/7/26 |
| Paper # | SDM93-69 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |