| Presentation | 1993/7/26 DEPENDENCE OF CHANNEL MOBILITY IN MOSFET ON Si-SiO_2 INTERFACE MICROROUGHNESS Kazuyuki Ohmi, Takashi Futatsuki, Koji Makihara, Kazuma Yamamoto, Tadahiro Ohmi, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The channel mobility in MOSFET is an important factor that determine the speed performance of devices.Miniaturization of device dimension requires high dopant concentration in substrate. In this paper,we have investigated the influence of the Si-SiO_2 interface microroughness and the dopant concentration of Si substrate on the electron channel mobility.As a result,the Si-SiO_ 2 interface microroughness strongly dominates the electron channel mobility in MOSFET as the inversion layer gets thinner together with higher dopant concentration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si/i_2 interface / microroughness / dopant concentration / Inversion Layer Width / Channel Mobility |
| Paper # | SDM93-68 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | DEPENDENCE OF CHANNEL MOBILITY IN MOSFET ON Si-SiO_2 INTERFACE MICROROUGHNESS |
| Sub Title (in English) | |
| Keyword(1) | Si/i_2 interface |
| Keyword(2) | microroughness |
| Keyword(3) | dopant concentration |
| Keyword(4) | Inversion Layer Width |
| Keyword(5) | Channel Mobility |
| 1st Author's Name | Kazuyuki Ohmi |
| 1st Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University() |
| 2nd Author's Name | Takashi Futatsuki |
| 2nd Author's Affiliation | Laboratory for Microelectronics Research Institute of Electrical Communication,Tohoku University |
| 3rd Author's Name | Koji Makihara |
| 3rd Author's Affiliation | Laboratory for Microelectronics Research Institute of Electrical Communication,Tohoku University |
| 4th Author's Name | Kazuma Yamamoto |
| 4th Author's Affiliation | Laboratory for Microelectiranes Research Institute of Electrical Communieation,Tohoku University |
| 5th Author's Name | Tadahiro Ohmi |
| 5th Author's Affiliation | Department of Electronics,Faculty of Engineering,Tohoku University |
| Date | 1993/7/26 |
| Paper # | SDM93-68 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |