| Presentation | 1993/7/26 Analysis of Mobility-Transconductance Enhancement in Double-Gate MOSFET Hiroshi Inokawa, Tetsushi Sakai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated novel double-gate MOSFETS,in which silicon layer thickness can be varied within a single wafer while keeping other device parameters such as channel width,impurity concentration,etc.constant.Using these devices,we found that,as the result of full depletion of the silicon layer,saturation- region transconductance increases by 88 %,98 % and 66 % for(100)n- channel,(111)n-channel and(100)p-channel,respectively.Analysis in terms of reduced body effect and increased mobility showed that the contribution of reduced body effect to the increased transconductance can be explained,but the observed increase in mobility was not compatible with the reported μ_eff>-E_eff> rela tionships. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | double-gate MOSFET / full depletion / mobility / transconductance |
| Paper # | SDM93-67 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Mobility-Transconductance Enhancement in Double-Gate MOSFET |
| Sub Title (in English) | |
| Keyword(1) | double-gate MOSFET |
| Keyword(2) | full depletion |
| Keyword(3) | mobility |
| Keyword(4) | transconductance |
| 1st Author's Name | Hiroshi Inokawa |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Tetsushi Sakai |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| Date | 1993/7/26 |
| Paper # | SDM93-67 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |