| Presentation | 1993/7/26 In-situ measurement of light emission in anodic oxidation process of Si Guixi Zhou, Yoichiro Nakanishi, Yoshinori Hatanaka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have evaluated interface-trap density(D_it>)distributions at the Si-SiO_2 interface for ultra-thin(4.2nm-thick)gate-oxide metal- oxide-semiconductor(MOS)diodes by the small signal conductance technique.The conventional quasi-static capacitance-voltage technique cannot be used to such thin-oxide samples because of tunneling currents through the oxide.In the technique,D_it> is detected as the frequency-dependent equivalent parallel conductance,which is separable from frequency-independent background losses due to the oxide leak.The method was applied to characterize the D_it>,generation at the Si-SiO_2 interface of ultra-thin oxide MOS diodes subjected to negative-bias-temperature aging stresses.The D_it>,generation is shown to be strongly affected by stress-bias and temperature,and to have weak oxide- thickness dependence.These results show that thin-oxide MOS structures are mainly degraded by the D_it>,generation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Hot electron / Anodic oxidation / Si / SiO_2 / Light-emission phenomenan / in-situ measurement |
| Paper # | SDM93-66 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | In-situ measurement of light emission in anodic oxidation process of Si |
| Sub Title (in English) | |
| Keyword(1) | Hot electron |
| Keyword(2) | Anodic oxidation |
| Keyword(3) | Si |
| Keyword(4) | SiO_2 |
| Keyword(5) | Light-emission phenomenan |
| Keyword(6) | in-situ measurement |
| 1st Author's Name | Guixi Zhou |
| 1st Author's Affiliation | Research Institute of Electronics,Shizuoka University() |
| 2nd Author's Name | Yoichiro Nakanishi |
| 2nd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| 3rd Author's Name | Yoshinori Hatanaka |
| 3rd Author's Affiliation | Research Institute of Electronics,Shizuoka University |
| Date | 1993/7/26 |
| Paper # | SDM93-66 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |