Presentation	1993/7/26 THEORETICAL ANALYSIS ON HOT CARRIER GENERATION IN MOSFETs Yasuhisa Omura,
PDF Download Page	PDF download Page Link
Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	The conventional energy balance equation is examined and a new formulation is carried out by taking into account the exact kinetic energy.Steady state solutions for carrier temperature and carrier mobility are described as a function of the longitudinal electric field and the carrier concentration.It is found that the carrier temperature is higher than expected by conventional models. It is also shown that the mobility expression is consistent with experimental results.The nonsteady state solution of the carrier temperature shows that the influence of the transverse electric field is strongly modulated by the longitudinal electric field.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	MOSFET / Hot carrier / Energy balance equation / Gate-field- induced effect
Paper #	SDM93-64
Date of Issue

Conference Information
Committee	SDM
Conference Date	1993/7/26(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)
Topics (in Japanese)	(See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	THEORETICAL ANALYSIS ON HOT CARRIER GENERATION IN MOSFETs
Sub Title (in English)
Keyword(1)	MOSFET
Keyword(2)	Hot carrier
Keyword(3)	Energy balance equation
Keyword(4)	Gate-field- induced effect
1st Author's Name	Yasuhisa Omura
1st Author's Affiliation	NTT LSI Laboratories()
Date	1993/7/26
Paper #	SDM93-64
Volume (vol)	vol.93
Number (no)	172
Page	pp.pp.-
#Pages	8
Date of Issue