Presentation 1993/7/26
HOT CARRIER RESISTANCE OF VERY-THIN GATE OXIDE FORMED BY ULTRACLEAN OXIDATION
Kou Nakamura, Kohji Makihara, Mizuho Morita, Tadahiro Ohmi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The effect of oxidation environment on the reliability of very- thin oxides is clarified by comparing ultraclean dry oxides,formed in the environment characterized by extremely low moisture and metal impurity concentrations,and conventional dry oxides.The ultraclean oxide has high reliability against the generation of electron traps,hole traps and interface traps by hot electrons injection or voltage stress.It is believed that the number of Si- OH bonds in the oxide film is reduced due to the low moisture concentration in oxidation furnace and consequently the water- related trap density is decreased.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ultraclean oxide / reliability / hot carrier / electron trap / hole trap / interface trap
Paper # SDM93-63
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Conference Information
Committee SDM
Conference Date 1993/7/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) HOT CARRIER RESISTANCE OF VERY-THIN GATE OXIDE FORMED BY ULTRACLEAN OXIDATION
Sub Title (in English)
Keyword(1) ultraclean oxide
Keyword(2) reliability
Keyword(3) hot carrier
Keyword(4) electron trap
Keyword(5) hole trap
Keyword(6) interface trap
1st Author's Name Kou Nakamura
1st Author's Affiliation Department of Electronics,Faculty of Engineering,Tohoku University()
2nd Author's Name Kohji Makihara
2nd Author's Affiliation Department of Electronics,Faculty of Engineering,Tohoku University
3rd Author's Name Mizuho Morita
3rd Author's Affiliation Laboratory for Microelectronics Research Institute of Electrical Communication,Tohoku University
4th Author's Name Tadahiro Ohmi
4th Author's Affiliation Department of Electronics,Faculty of Engineering,Tohoku University
Date 1993/7/26
Paper # SDM93-63
Volume (vol) vol.93
Number (no) 172
Page pp.pp.-
#Pages 6
Date of Issue