Presentation 1993/7/26
A superior method of eliminating B mode dielectric breakdown failure in gate oxides ulitizing a using charging phenomenon
Yukihiro Tominaga, Akihiko Nara, Takatoshi Ushikoshi, Tsuneo Ajioka, Hironori Kitabayashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a new method to reduce B mode dielectric breakdown of gate oxide by means of charge up at near intrinsic dielectric breakdown voltage.The charge is generated by pouring deionized water on a wafer with gate oxide which is placed on a spinchuk in a brush scrubber.The charge up voltage increases with increasing the spin rate and saturates close to intrinsic dielectric breakdown.This charge up can reduce B mode dielectric breakdown,which may be attributed to self-healing of gate oxide.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) gate oxide / brsh-scrub / charge up / B mode dielectric breakdown
Paper # SDM93-61
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Committee SDM
Conference Date 1993/7/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A superior method of eliminating B mode dielectric breakdown failure in gate oxides ulitizing a using charging phenomenon
Sub Title (in English)
Keyword(1) gate oxide
Keyword(2) brsh-scrub
Keyword(3) charge up
Keyword(4) B mode dielectric breakdown
1st Author's Name Yukihiro Tominaga
1st Author's Affiliation LSI Process Technology Department,OKI Electric()
2nd Author's Name Akihiko Nara
2nd Author's Affiliation Miyagi Oki Electric
3rd Author's Name Takatoshi Ushikoshi
3rd Author's Affiliation Miyagi Oki Electric
4th Author's Name Tsuneo Ajioka
4th Author's Affiliation LSI Process Technology Department,OKI Electric
5th Author's Name Hironori Kitabayashi
5th Author's Affiliation LSI Process Technology Department,OKI Electric
Date 1993/7/26
Paper # SDM93-61
Volume (vol) vol.93
Number (no) 172
Page pp.pp.-
#Pages 6
Date of Issue