| Presentation | 1993/7/26 Radiation Induced Structure Changes in Thermally Grown Silicon Dioxide Film Yoshihiro Sugita, Yasuo Nara, Kei Horiuchi, Takashi Ito, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The high energy photons(>1OOeV)or eletron beam break Si-O bonds and cause large lattice relaxation in SiO_2 film.To minimize the degradation of SiO_2 films during electron beam and, or X-ray lithography,the effects of radiation were examined.The dependence of the breaking of Si-O bonds on the radiation dose and relationship between the decrease in the number of Si-O bonds and oxygen vacancy defect(E′ center)were studied using IR absrption an d ESR techniqu.The Si-O bond broken is propotional to the quater- root of the radiation dose.The density of E′ center is 1/260 times of that of broken bonds.The irradiated SiO_2 film consists of an oxygen deficient Si-O network and the displaced oxygen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | IR / ESR / radiation damage / silicon dioxide / X-ray lithography / electron lithography |
| Paper # | SDM93-60 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Radiation Induced Structure Changes in Thermally Grown Silicon Dioxide Film |
| Sub Title (in English) | |
| Keyword(1) | IR |
| Keyword(2) | ESR |
| Keyword(3) | radiation damage |
| Keyword(4) | silicon dioxide |
| Keyword(5) | X-ray lithography |
| Keyword(6) | electron lithography |
| 1st Author's Name | Yoshihiro Sugita |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Yasuo Nara |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Kei Horiuchi |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Takashi Ito |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 1993/7/26 |
| Paper # | SDM93-60 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |