| Presentation | 1993/7/26 Evaluation of the charge distribution in the oxide of MOS structure before and after γ-ray radiation Kouhei Okada, Schunsaku Imaki, Yoshihiro Takhashi, Masato Yoshikawa, Kazunori Ohnishi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As one of radiation effects in MOS structure,the positive charge build up in the oxide.The locate of trapped charge is unknowned.It is important to confirm the charge distribution in the oxide in order to understand the mechanism of charge trapping.The distribution in the oxide is evaluated from the V_mg> measurement for the various oxide thickness bv HF etching.The charge distribution in the oxide before and after radiation is discussed by using this method. From this experiments,we found the positive charge near the Si- SiO_2 interface in the oxide,and the amount of charge is indepederit of the oxide thickness,and depends on the oxidizing temparature.After irradiation,it is recognized that the charges near the Si-SiO_2 interface increase,and also the radiation- induced charge depends on the oxidiziing temparature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS Structure / evaluation of the charge distribution / oxide etching / γ-ray radiation / charge trapping |
| Paper # | SDM93-59 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of the charge distribution in the oxide of MOS structure before and after γ-ray radiation |
| Sub Title (in English) | |
| Keyword(1) | MOS Structure |
| Keyword(2) | evaluation of the charge distribution |
| Keyword(3) | oxide etching |
| Keyword(4) | γ-ray radiation |
| Keyword(5) | charge trapping |
| 1st Author's Name | Kouhei Okada |
| 1st Author's Affiliation | College of Science and Technology,Nihon University() |
| 2nd Author's Name | Schunsaku Imaki |
| 2nd Author's Affiliation | College of Science and Technology,Nihon University |
| 3rd Author's Name | Yoshihiro Takhashi |
| 3rd Author's Affiliation | College of Science and Technology,Nihon University |
| 4th Author's Name | Masato Yoshikawa |
| 4th Author's Affiliation | Takasaki Radiation Chemistry Research Establishment,Japan Atomic Energy Research Institute (JAERI) |
| 5th Author's Name | Kazunori Ohnishi |
| 5th Author's Affiliation | College of Science and Technology,Nihon University |
| Date | 1993/7/26 |
| Paper # | SDM93-59 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |