| Presentation | 1993/7/26 Ultra-thin oxynitride gate formed by oxidizing thermally-grown silicon nitride. Takayuki Aoyama, Tatsuya Yamazaki, Toshihiro Sugii, Takashi Ito, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied ultrathin oxynitride gate dielectrics formed by oxidizing thin,thermally grown silicon nitride.The oxynitride films have potential for gate dielectrics of deep-submicron MOSFETs because of their high current drivability,low leakage current,and boron penetration suppression. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxynitride / Gate dielectrics / MOS |
| Paper # | SDM93-58 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/7/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-thin oxynitride gate formed by oxidizing thermally-grown silicon nitride. |
| Sub Title (in English) | |
| Keyword(1) | Oxynitride |
| Keyword(2) | Gate dielectrics |
| Keyword(3) | MOS |
| 1st Author's Name | Takayuki Aoyama |
| 1st Author's Affiliation | Fujitsu Laboratries Ltd.() |
| 2nd Author's Name | Tatsuya Yamazaki |
| 2nd Author's Affiliation | Fujitsu Laboratries Ltd. |
| 3rd Author's Name | Toshihiro Sugii |
| 3rd Author's Affiliation | Fujitsu Laboratries Ltd. |
| 4th Author's Name | Takashi Ito |
| 4th Author's Affiliation | Fujitsu Laboratries Ltd. |
| Date | 1993/7/26 |
| Paper # | SDM93-58 |
| Volume (vol) | vol.93 |
| Number (no) | 172 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |