Presentation 1993/7/26
Enhanced liquid phase deposition SiO_2 films by electric field
Kenji Fukumitsu, Nobuo Haneji,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The liquid phase deposition(LPD)is the method to deposit SiO_2 films on the substrate dipped in the super-saturated H_2SiF_6 solutions.The LPD is room temperature process,and attractive for the low-temperature process of the semiconductor device.However, there are still some disadvantages in LPD SiO_2 films,such as the breakdown field and its low deposition rate(about several tens£nm, h!),and so on. We studied the role of the electric field to the LPD process,and got the good results as to the deposition rate(about 2 times faster than the normal LPD process)and the uniformity of the films. But characteristics of the SiO_2, Si interface was not improved.So it is necessary to adjust the parameters during the deposition for improvement of characteristics.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) liquid phase deposition / low temperature process / break down voltage
Paper # SDM93-57
Date of Issue

Conference Information
Committee SDM
Conference Date 1993/7/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Enhanced liquid phase deposition SiO_2 films by electric field
Sub Title (in English)
Keyword(1) liquid phase deposition
Keyword(2) low temperature process
Keyword(3) break down voltage
1st Author's Name Kenji Fukumitsu
1st Author's Affiliation Department of Electrical Engineering,Faculty of Engineering, Yokohama National University()
2nd Author's Name Nobuo Haneji
2nd Author's Affiliation Department of Electrical Engineering,Faculty of Engineering, Yokohama National University
Date 1993/7/26
Paper # SDM93-57
Volume (vol) vol.93
Number (no) 172
Page pp.pp.-
#Pages 7
Date of Issue