Presentation 1993/7/26
The evaluation of silicon nitride film deposited by photo-CVD
Yoshifumi Mori, Yasushi Deguchi, Yoshihiro Takahashi, Kazunori Ohnishi,
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Abstract(in English) We estimate the thermal annealing effects of silicon nitride film deposited by photo CVD,by XPS and capacitance-voltage measurment.As the results,We can not find any chang e of composition ratio of Si,N and O by annealing temperature between 300℃ and 800℃.In electrical characteristics,we found that the dec rease of injection by an electric field and Dit after annealing at low temperature,but increase of them at high.We conclude that incre ases of Dit and injected charge were originated by generation of trap with releasing hydrogen in the film by annealing
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photo-CVD / Silicon Nitride / Annealing / Injected Charge / Density of Interface Trap
Paper # SDM93-56
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Committee SDM
Conference Date 1993/7/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The evaluation of silicon nitride film deposited by photo-CVD
Sub Title (in English)
Keyword(1) Photo-CVD
Keyword(2) Silicon Nitride
Keyword(3) Annealing
Keyword(4) Injected Charge
Keyword(5) Density of Interface Trap
1st Author's Name Yoshifumi Mori
1st Author's Affiliation College of Science and Technology,Nihon University()
2nd Author's Name Yasushi Deguchi
2nd Author's Affiliation College of Science and Technology,Nihon University
3rd Author's Name Yoshihiro Takahashi
3rd Author's Affiliation College of Science and Technology,Nihon University
4th Author's Name Kazunori Ohnishi
4th Author's Affiliation College of Science and Technology,Nihon University
Date 1993/7/26
Paper # SDM93-56
Volume (vol) vol.93
Number (no) 172
Page pp.pp.-
#Pages 6
Date of Issue