Presentation | 1993/7/26 The evaluation of silicon nitride film deposited by photo-CVD Yoshifumi Mori, Yasushi Deguchi, Yoshihiro Takahashi, Kazunori Ohnishi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We estimate the thermal annealing effects of silicon nitride film deposited by photo CVD,by XPS and capacitance-voltage measurment.As the results,We can not find any chang e of composition ratio of Si,N and O by annealing temperature between 300℃ and 800℃.In electrical characteristics,we found that the dec rease of injection by an electric field and Dit after annealing at low temperature,but increase of them at high.We conclude that incre ases of Dit and injected charge were originated by generation of trap with releasing hydrogen in the film by annealing |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Photo-CVD / Silicon Nitride / Annealing / Injected Charge / Density of Interface Trap |
Paper # | SDM93-56 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1993/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | The evaluation of silicon nitride film deposited by photo-CVD |
Sub Title (in English) | |
Keyword(1) | Photo-CVD |
Keyword(2) | Silicon Nitride |
Keyword(3) | Annealing |
Keyword(4) | Injected Charge |
Keyword(5) | Density of Interface Trap |
1st Author's Name | Yoshifumi Mori |
1st Author's Affiliation | College of Science and Technology,Nihon University() |
2nd Author's Name | Yasushi Deguchi |
2nd Author's Affiliation | College of Science and Technology,Nihon University |
3rd Author's Name | Yoshihiro Takahashi |
3rd Author's Affiliation | College of Science and Technology,Nihon University |
4th Author's Name | Kazunori Ohnishi |
4th Author's Affiliation | College of Science and Technology,Nihon University |
Date | 1993/7/26 |
Paper # | SDM93-56 |
Volume (vol) | vol.93 |
Number (no) | 172 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |