Presentation | 1995/10/20 Preparation of Silicon Nitride Film from Organo-silicon by Remote Plasma Method Ken Kitamura, Sunil Wickramanayaka, Yoichiro Nakanishi, Hatanaka Yoshinori, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An investigation was carried out in obtaining high quality insulating film from hexamethyldisilazane using a remote plasma. As the plasma gas argon, nitrogen, ammonia and hydrogen were used. Chemical and physical properties of the films deposited by these different plasma gases were comparatively studied. With an increase of substrate temperature, the carbon fraction decreases while nitrogen fraction increases. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Remote plasma CVD / hexamethyldisilazane / SiC_xN_y |
Paper # | SDM95-153 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1995/10/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Preparation of Silicon Nitride Film from Organo-silicon by Remote Plasma Method |
Sub Title (in English) | |
Keyword(1) | Remote plasma CVD |
Keyword(2) | hexamethyldisilazane |
Keyword(3) | SiC_xN_y |
1st Author's Name | Ken Kitamura |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Sunil Wickramanayaka |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Yoichiro Nakanishi |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
4th Author's Name | Hatanaka Yoshinori |
4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 1995/10/20 |
Paper # | SDM95-153 |
Volume (vol) | vol.95 |
Number (no) | 317 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |