Presentation 1995/10/20
Preparation of Silicon Nitride Film from Organo-silicon by Remote Plasma Method
Ken Kitamura, Sunil Wickramanayaka, Yoichiro Nakanishi, Hatanaka Yoshinori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) An investigation was carried out in obtaining high quality insulating film from hexamethyldisilazane using a remote plasma. As the plasma gas argon, nitrogen, ammonia and hydrogen were used. Chemical and physical properties of the films deposited by these different plasma gases were comparatively studied. With an increase of substrate temperature, the carbon fraction decreases while nitrogen fraction increases.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Remote plasma CVD / hexamethyldisilazane / SiC_xN_y
Paper # SDM95-153
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Conference Information
Committee SDM
Conference Date 1995/10/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preparation of Silicon Nitride Film from Organo-silicon by Remote Plasma Method
Sub Title (in English)
Keyword(1) Remote plasma CVD
Keyword(2) hexamethyldisilazane
Keyword(3) SiC_xN_y
1st Author's Name Ken Kitamura
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Sunil Wickramanayaka
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Yoichiro Nakanishi
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Hatanaka Yoshinori
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1995/10/20
Paper # SDM95-153
Volume (vol) vol.95
Number (no) 317
Page pp.pp.-
#Pages 6
Date of Issue