Presentation 1995/10/20
Growth of ZnSe films on Silicon by H-radical assisted MOCVD
M. Morita, T. Aoki, Y. Nakanishi, Y. Hatanaka,
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Abstract(in English) ZnSe films were grown on silicon substrates by H-radical assisted MOCVD technique. Though it is difficult in obtaining epitaxial ZnSe film on non-polar silicon substrates, when H-radicals are introduced into the reaction site, an epitaxial growth could be observed on Si(1OO) and Si(111)substrates. H-radicals facilitate an epitaxial growth by dissociating and removing weak bonds exist in the growing film. Further, H-radicals etch the film to some certain extent. This etching rate is found to be inversely propotional to the film growth rate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ZnSe / MOCVD / remote Plasma CVD / radical etching / Epitaxial growth on Si
Paper # SDM95-152
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Committee SDM
Conference Date 1995/10/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of ZnSe films on Silicon by H-radical assisted MOCVD
Sub Title (in English)
Keyword(1) ZnSe
Keyword(2) MOCVD
Keyword(3) remote Plasma CVD
Keyword(4) radical etching
Keyword(5) Epitaxial growth on Si
1st Author's Name M. Morita
1st Author's Affiliation Research Institure of Electronics, Shizuoka University()
2nd Author's Name T. Aoki
2nd Author's Affiliation Research Institure of Electronics, Shizuoka University
3rd Author's Name Y. Nakanishi
3rd Author's Affiliation Research Institure of Electronics, Shizuoka University
4th Author's Name Y. Hatanaka
4th Author's Affiliation Research Institure of Electronics, Shizuoka University
Date 1995/10/20
Paper # SDM95-152
Volume (vol) vol.95
Number (no) 317
Page pp.pp.-
#Pages 7
Date of Issue