Presentation | 1995/10/20 Growth of ZnSe films on Silicon by H-radical assisted MOCVD M. Morita, T. Aoki, Y. Nakanishi, Y. Hatanaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnSe films were grown on silicon substrates by H-radical assisted MOCVD technique. Though it is difficult in obtaining epitaxial ZnSe film on non-polar silicon substrates, when H-radicals are introduced into the reaction site, an epitaxial growth could be observed on Si(1OO) and Si(111)substrates. H-radicals facilitate an epitaxial growth by dissociating and removing weak bonds exist in the growing film. Further, H-radicals etch the film to some certain extent. This etching rate is found to be inversely propotional to the film growth rate. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | ZnSe / MOCVD / remote Plasma CVD / radical etching / Epitaxial growth on Si |
Paper # | SDM95-152 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1995/10/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of ZnSe films on Silicon by H-radical assisted MOCVD |
Sub Title (in English) | |
Keyword(1) | ZnSe |
Keyword(2) | MOCVD |
Keyword(3) | remote Plasma CVD |
Keyword(4) | radical etching |
Keyword(5) | Epitaxial growth on Si |
1st Author's Name | M. Morita |
1st Author's Affiliation | Research Institure of Electronics, Shizuoka University() |
2nd Author's Name | T. Aoki |
2nd Author's Affiliation | Research Institure of Electronics, Shizuoka University |
3rd Author's Name | Y. Nakanishi |
3rd Author's Affiliation | Research Institure of Electronics, Shizuoka University |
4th Author's Name | Y. Hatanaka |
4th Author's Affiliation | Research Institure of Electronics, Shizuoka University |
Date | 1995/10/20 |
Paper # | SDM95-152 |
Volume (vol) | vol.95 |
Number (no) | 317 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |