Presentation 1995/10/20
Preperation of silicon oxynitride thin films by remote-plasma excited nitrogen and oxygen
Yoji Saito, Nobuhiro Kawabe,
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Abstract(in English) Silicon oxynitride thin films are promising highly-reliable dielectrics in the memory devices. In this study, direct oxynitridation of silicon is successfully performed by remote-plasma excited nitrogen and oxygen gaseous mixtures at 550 ℃. Nitrogen atoms are mainly incorporated near the SiO_2-Si interfaces with Auger electron spectroscopy measurements. We have controled the peak density of nitrogen up to several atomic percents at least, varying the partial pressure of nitrogen and oxygen. The supply of active oxygen species is required for the growth of oxynitride films, but reduces the density of nitrogen in the films.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) remote plasma / silicon oxynitride films / nitrogen gas / oxygen gas / Auger analysis / gas analysis
Paper # SDM95-151
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Conference Information
Committee SDM
Conference Date 1995/10/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Preperation of silicon oxynitride thin films by remote-plasma excited nitrogen and oxygen
Sub Title (in English)
Keyword(1) remote plasma
Keyword(2) silicon oxynitride films
Keyword(3) nitrogen gas
Keyword(4) oxygen gas
Keyword(5) Auger analysis
Keyword(6) gas analysis
1st Author's Name Yoji Saito
1st Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University()
2nd Author's Name Nobuhiro Kawabe
2nd Author's Affiliation Department of Electric Engineering and Electronics, Faculty of Engineering, Seikei University
Date 1995/10/20
Paper # SDM95-151
Volume (vol) vol.95
Number (no) 317
Page pp.pp.-
#Pages 6
Date of Issue