| Presentation | 1995/10/20 Low-temperature Si epitaxial growth by remote plasma-enhanced CVD Teruaki Nishida, Kazutoshi Utsumi, Ashtosh Ganjoo, Akira Yoshida, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Remote plasma-enhanced CVD (RPECVD) method is useful to reduce surface damage during the deposition. Hence, RPECVD is paid attention as a promising method of epitaxial growth at low temperature. In this study, we have deposited Si thin film on Si substrates by RPECVD method using RF (13.56MHz)power and 100% disilane as the source gas. Substrates were treated with HF before setting into the growth chamber, and in-situ hydrogen plasma clearing was performed. The crystallinity of the deposited Si films was characterized by RHEED. Single crystalline films of Si have been obtained without heating the substrates . |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | low-temperature deposition / remote plasma / Si epitaxial growth / CVD |
| Paper # | SDM95-150 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature Si epitaxial growth by remote plasma-enhanced CVD |
| Sub Title (in English) | |
| Keyword(1) | low-temperature deposition |
| Keyword(2) | remote plasma |
| Keyword(3) | Si epitaxial growth |
| Keyword(4) | CVD |
| 1st Author's Name | Teruaki Nishida |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Kazutoshi Utsumi |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Ashtosh Ganjoo |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| 4th Author's Name | Akira Yoshida |
| 4th Author's Affiliation | Toyohashi University of Technology |
| Date | 1995/10/20 |
| Paper # | SDM95-150 |
| Volume (vol) | vol.95 |
| Number (no) | 317 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |