| Presentation | 1995/10/20 Characterization of Highly Selective SiO_2/Si_3N_4 etching of High-Aspect-Ratio Holes Hisataka Hayashi, Kazuaki Kurihara, Makoto Sekine, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The pattern size dependence of the SiO_2 etch rate of contact holes, and Si_3N_4 etch rate at the bottom of the holes were studied in C_4F_8 + CO plasma. It was found that these etch rates can be characterized by aspect ratio, regardless of absolute pattern size. SiO_2 etch rate decreased with increasing aspect ratio and became 0 at the aspect ratio of 6. Si_3N_4 etch rate also decreased, but at the aspect ratio of 12.5, etching still occurred From ion current measurements through capillary plates (CP) with different aspect ratio holes, it was deduced that etch rates decreased at high aspect ratio because of decreasing ion current. XPS analyses revealed that the fluorocarbon film deposited on the Si_3N_4 surface at the bottom of a hole of aspect ratio 12 were more F-rich and more vulnerable to sputtering than that deposited on a flat Si_3N_4 surface. This explains why Si_3N_4 is etched even in high aspect ratio holes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiO_2 / Si_3N_4 / C_4F_8 / contact hole / selective etching |
| Paper # | SDM95-148 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Highly Selective SiO_2/Si_3N_4 etching of High-Aspect-Ratio Holes |
| Sub Title (in English) | |
| Keyword(1) | SiO_2 |
| Keyword(2) | Si_3N_4 |
| Keyword(3) | C_4F_8 |
| Keyword(4) | contact hole |
| Keyword(5) | selective etching |
| 1st Author's Name | Hisataka Hayashi |
| 1st Author's Affiliation | ULSI Research Labs., Toshiba Corporation() |
| 2nd Author's Name | Kazuaki Kurihara |
| 2nd Author's Affiliation | ULSI Research Labs., Toshiba Corporation |
| 3rd Author's Name | Makoto Sekine |
| 3rd Author's Affiliation | ULSI Research Labs., Toshiba Corporation |
| Date | 1995/10/20 |
| Paper # | SDM95-148 |
| Volume (vol) | vol.95 |
| Number (no) | 317 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |