| Presentation | 1995/10/20 Etching of Single Crystal Al2O3 Films using Si Ion Implantation Hoon Kim, Makoto Ishida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new etching technology for a sapphire wafer and an epitaxial γ - Al2O3(10O) film grown on Si(100) has been developed using Si ion implantation. Epitaxial Al2O3 films were grown on Si substrates by low-pressure chemical vapor deposition using trimethylaluminum (TMA) and N2O as source gases. The procedure of this etching is that epitaxial Al2O3(100) / Si(100) and sapphire (0112) wafers with patterns of lines and spaces were doped by Si ionimplantation with dose densities from 4×1O<14> tol×10<17> cm<-2> and acceleration voltages from 3OkV to 120kV, and then the implan- ted wafers were etched by chemical etchant of HF+H2O. The change of the surface structure from Al2O3 to Al2O3・ SiO2 (aluminosilicate) and the surface damaged effect are dominant reason for this etching. This etching technology is an anisotropic etching like a reactive ion etching because the only ion implanted area can be etched. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | single crystal Al2O3 / Si ion implantation / aluminosilicate(Al2O3・SiO2), wet etching |
| Paper # | SDM95-147 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Etching of Single Crystal Al2O3 Films using Si Ion Implantation |
| Sub Title (in English) | |
| Keyword(1) | single crystal Al2O3 |
| Keyword(2) | Si ion implantation |
| Keyword(3) | aluminosilicate(Al2O3・SiO2), wet etching |
| 1st Author's Name | Hoon Kim |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology() |
| 2nd Author's Name | Makoto Ishida |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering Toyohashi University of Technology |
| Date | 1995/10/20 |
| Paper # | SDM95-147 |
| Volume (vol) | vol.95 |
| Number (no) | 317 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |