Presentation | 1995/10/20 Development of Neutral Beam Assisted Etching Technic Ken'etsu Yokogawa, Takashi Yunogami, Tatsumi Mizutani, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have proposed neutral -beam -assisted (NBA) etching for low damage LSI processes. The specimen surface is subjected to neutral radicals to form adsorbed layers. Neutral beams, generated from ion beams created by charge -exchange reactions, impinge on the adsorbed layers to enhance the etching reaction. We had developed three types of NBA etching apparatuses (prototype, coaxial type, tandem type). These apparatuses were applied to SiO_2 etching. The etching rate was 76 nm/min, and the uniformity was about ±8% for 8 inch diameter. In addition, high anisotoropic etching shapes of submicron patterns were obtained without SiO_2 film degradations. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | neutral-beam / assisted etching / plasma / damage / SiO_2 |
Paper # | SDM95-146 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1995/10/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Development of Neutral Beam Assisted Etching Technic |
Sub Title (in English) | |
Keyword(1) | neutral-beam |
Keyword(2) | assisted etching |
Keyword(3) | plasma |
Keyword(4) | damage |
Keyword(5) | SiO_2 |
1st Author's Name | Ken'etsu Yokogawa |
1st Author's Affiliation | Hitachi Central Research Lab.() |
2nd Author's Name | Takashi Yunogami |
2nd Author's Affiliation | Semiconductor & Integrated Circuits. Div. Hitachi |
3rd Author's Name | Tatsumi Mizutani |
3rd Author's Affiliation | Hitachi Kasado Works |
Date | 1995/10/20 |
Paper # | SDM95-146 |
Volume (vol) | vol.95 |
Number (no) | 317 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |