Presentation 1995/10/20
Development of Neutral Beam Assisted Etching Technic
Ken'etsu Yokogawa, Takashi Yunogami, Tatsumi Mizutani,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have proposed neutral -beam -assisted (NBA) etching for low damage LSI processes. The specimen surface is subjected to neutral radicals to form adsorbed layers. Neutral beams, generated from ion beams created by charge -exchange reactions, impinge on the adsorbed layers to enhance the etching reaction. We had developed three types of NBA etching apparatuses (prototype, coaxial type, tandem type). These apparatuses were applied to SiO_2 etching. The etching rate was 76 nm/min, and the uniformity was about ±8% for 8 inch diameter. In addition, high anisotoropic etching shapes of submicron patterns were obtained without SiO_2 film degradations.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) neutral-beam / assisted etching / plasma / damage / SiO_2
Paper # SDM95-146
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Committee SDM
Conference Date 1995/10/20(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Neutral Beam Assisted Etching Technic
Sub Title (in English)
Keyword(1) neutral-beam
Keyword(2) assisted etching
Keyword(3) plasma
Keyword(4) damage
Keyword(5) SiO_2
1st Author's Name Ken'etsu Yokogawa
1st Author's Affiliation Hitachi Central Research Lab.()
2nd Author's Name Takashi Yunogami
2nd Author's Affiliation Semiconductor & Integrated Circuits. Div. Hitachi
3rd Author's Name Tatsumi Mizutani
3rd Author's Affiliation Hitachi Kasado Works
Date 1995/10/20
Paper # SDM95-146
Volume (vol) vol.95
Number (no) 317
Page pp.pp.-
#Pages 7
Date of Issue