| Presentation | 1995/10/20 Dry development for G^b DRAM Yasuki Kimura, Hiroyuki Endo, Akihiro Endo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gas composition where isotropic etching component and isotropic deposition component cancel each other, was obtained by adding ethanol gas to oxygen based chemistry. At the gas composition, resist profile was steeply rising and microloading effect of figure and etching rate was decreased. Mask facetting problem was also suppressed by decreasing rf bias without deterioration of profile. However, bowing occurs according to the pattern size down to subquater micron like G^bDRAM because directionality of ion is worse at low rf bias. The bowing problem has lwen solved by introducing material of bottom layer which includes sulfur. 4G^bDRAM class pattern has been successfully fabricated by applying these methods. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dry development / O2RIE / multilayer resist / profile control / ethanol / ECR etcher |
| Paper # | SDM95-145 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dry development for G^b DRAM |
| Sub Title (in English) | |
| Keyword(1) | dry development |
| Keyword(2) | O2RIE |
| Keyword(3) | multilayer resist |
| Keyword(4) | profile control |
| Keyword(5) | ethanol |
| Keyword(6) | ECR etcher |
| 1st Author's Name | Yasuki Kimura |
| 1st Author's Affiliation | VLSI R&D center, Oki electric industry Co., Ltd.() |
| 2nd Author's Name | Hiroyuki Endo |
| 2nd Author's Affiliation | VLSI R&D center, Oki electric industry Co., Ltd. |
| 3rd Author's Name | Akihiro Endo |
| 3rd Author's Affiliation | VLSI R&D center, Oki electric industry Co., Ltd. |
| Date | 1995/10/20 |
| Paper # | SDM95-145 |
| Volume (vol) | vol.95 |
| Number (no) | 317 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |