| Presentation | 1996/1/26 Evaluation of CMP-Cu interconnects prepared with CVD and with sputter-reflow M Hoshino, N Misawa, K Kakuta, N Ohsako, S Okamoto, T Ohba, H Yagi, M Yamada, Y Furumura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the electromigration resistance of CMP-copper lines prepared by CVD and sputter-reflow. Resistances of lines by sputter-reflow and CVD do not have much differences. However the electromigration resistance is very different. CVD-Cu was two orders weaker than the reflowed one. The difference was due to the difference in crystal grain sizes. The sputter-reflow one was about 1μm. However the grain size of CVD-Cu is less than 0.5μm. The large grain size is due to the anneal effect during the reflow process. EM resistance will be larger to optimize the CVD-Cu texture varying the growth condition. Annealing of CVD-Cu will also increase the EM resistance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu / CMP / CVD / sputter / reflow / electromigration |
| Paper # | SDM95-206 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/1/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of CMP-Cu interconnects prepared with CVD and with sputter-reflow |
| Sub Title (in English) | |
| Keyword(1) | Cu |
| Keyword(2) | CMP |
| Keyword(3) | CVD |
| Keyword(4) | sputter |
| Keyword(5) | reflow |
| Keyword(6) | electromigration |
| 1st Author's Name | M Hoshino |
| 1st Author's Affiliation | Fujitsu Ltd.() |
| 2nd Author's Name | N Misawa |
| 2nd Author's Affiliation | Fujitsu Ltd. |
| 3rd Author's Name | K Kakuta |
| 3rd Author's Affiliation | Fujitsu Ltd. |
| 4th Author's Name | N Ohsako |
| 4th Author's Affiliation | Fujitsu Ltd. |
| 5th Author's Name | S Okamoto |
| 5th Author's Affiliation | Fujitsu Ltd. |
| 6th Author's Name | T Ohba |
| 6th Author's Affiliation | Fujitsu Ltd. |
| 7th Author's Name | H Yagi |
| 7th Author's Affiliation | Fujitsu Ltd. |
| 8th Author's Name | M Yamada |
| 8th Author's Affiliation | Fujitsu Ltd. |
| 9th Author's Name | Y Furumura |
| 9th Author's Affiliation | Fujitsu Ltd. |
| Date | 1996/1/26 |
| Paper # | SDM95-206 |
| Volume (vol) | vol.95 |
| Number (no) | 497 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |