| Presentation | 1995/7/27 Inversion Layer Mobility of Subhalf-micron MOS Transistors Duheon Song, Jongsung Park, Kyungho Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present the inversion layer mobility of a subhalf-micron MOS transistor, which is extracted from I-V measurements and the inversion charge based on the unified charge control model. It is shown that universality on the inversion layer mobility of a subhalf micron MOSFET is still valid, and the inversion layer mobility of short channel MOSFETs is very sensitive to the variations of series resistances. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | inversion layer mobility / unified charge control model / universality law |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/7/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Inversion Layer Mobility of Subhalf-micron MOS Transistors |
| Sub Title (in English) | |
| Keyword(1) | inversion layer mobility |
| Keyword(2) | unified charge control model |
| Keyword(3) | universality law |
| 1st Author's Name | Duheon Song |
| 1st Author's Affiliation | Advanced Device Development Dept., ULSI Research Lab., LG Semicon Co.() |
| 2nd Author's Name | Jongsung Park |
| 2nd Author's Affiliation | Advanced Device Development Dept., ULSI Research Lab., LG Semicon Co. |
| 3rd Author's Name | Kyungho Lee |
| 3rd Author's Affiliation | Advanced Device Development Dept., ULSI Research Lab., LG Semicon Co. |
| Date | 1995/7/27 |
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| Volume (vol) | vol.95 |
| Number (no) | 194 |
| Page | pp.pp.- |
| #Pages | 6 |
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