| Presentation | 1995/5/24 Evaluation of Latent Damage in Oxide Films due to Plasma Exposure Hiroyoshi Kitabayashi, Hirotaka Muto, Haruhisa Fujii, Shigenori Sakamori, Hiroshi Miyatake, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Plasma process causes oxide charging, which is temporarily removed by high temparature annealing steps. However the oxide charging damage reappears during device operation as enhanced flatband voltage shift. We investigated latent damage in oxide films due to plasma exposure. It was found that latent damage depends on the polarity of FN stress. In positive FN stress (dense plasma region), neutral defects in the oxide remain after anneal. The neutral defects causes positive charge accumulation by subsequent FN stress. On the other hand, in negative FN injection, latent damage are passivated by anneal. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOS / Plasma exposure / FN current / Damage / SiO2 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/5/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of Latent Damage in Oxide Films due to Plasma Exposure |
| Sub Title (in English) | |
| Keyword(1) | MOS |
| Keyword(2) | Plasma exposure |
| Keyword(3) | FN current |
| Keyword(4) | Damage |
| Keyword(5) | SiO2 |
| 1st Author's Name | Hiroyoshi Kitabayashi |
| 1st Author's Affiliation | Mitsubishi Electric Corp. Central Research Lab.() |
| 2nd Author's Name | Hirotaka Muto |
| 2nd Author's Affiliation | Mitsubishi Electric Corp. Central Research Lab. |
| 3rd Author's Name | Haruhisa Fujii |
| 3rd Author's Affiliation | Mitsubishi Electric Corp. Central Research Lab. |
| 4th Author's Name | Shigenori Sakamori |
| 4th Author's Affiliation | Mitsubishi Electric Corp. ULSI Lab. |
| 5th Author's Name | Hiroshi Miyatake |
| 5th Author's Affiliation | Mitsubishi Electric Corp. ULSI Lab. |
| Date | 1995/5/24 |
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| Volume (vol) | vol.95 |
| Number (no) | 66 |
| Page | pp.pp.- |
| #Pages | 6 |
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