| Presentation | 1995/5/24 Application of Charge Pumping Technique to analyze the memory characteristic degradation of a Flash EEPROM device K. Yamamoto, K. Ohnishi, Y. Takahashi, J. Satoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The degradation of endurance characteristic in a Flash EEPROM is discussed by the measurement of charge pumping current. From this experiments, we found that the charge pumping current due to the interface traps near the drain and the source can be separated. With the increase of write and erase cycles, the interface traps near the source increase. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash EEPROM / Charge Pumping Technique / Interface Traps / Endurance |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/5/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of Charge Pumping Technique to analyze the memory characteristic degradation of a Flash EEPROM device |
| Sub Title (in English) | |
| Keyword(1) | Flash EEPROM |
| Keyword(2) | Charge Pumping Technique |
| Keyword(3) | Interface Traps |
| Keyword(4) | Endurance |
| 1st Author's Name | K. Yamamoto |
| 1st Author's Affiliation | College of Sci. & Tech. Nihon University() |
| 2nd Author's Name | K. Ohnishi |
| 2nd Author's Affiliation | College of Sci. & Tech. Nihon University |
| 3rd Author's Name | Y. Takahashi |
| 3rd Author's Affiliation | College of Sci. & Tech. Nihon University |
| 4th Author's Name | J. Satoh |
| 4th Author's Affiliation | College of Sci. & Tech. Nihon University |
| Date | 1995/5/24 |
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| Volume (vol) | vol.95 |
| Number (no) | 66 |
| Page | pp.pp.- |
| #Pages | 6 |
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