| Presentation | 1995/4/21 SINGLE ELECTRON TRAPS IN A ONE DIMENSIONAL TRAPS T. Sakamoto, Y. Nakamura, S.W. Hwang, K. Nakamura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Random telegraph signals (RTSs) caused by trapping and detrapping of an electron have been reported in a GaAs/Al_XGa_<1-X>As one-dimensional (1D) channel. Because Coulomb potential of a trapped electron near the 1D channel contributes to its bottle-neck potential, a continuos trapping-detrapping cycle causes the fluctuation of the potential, thus, the fluctuation of the conductance of the channel. There exist many traps in a material with random energy distribution. RTS appears whenever Fermi energy crosses the energy levels of traps. Here we present that trapping events are not independent but correlated each other due to Coulomb potential. We also discuess the spatial distribution of traps in the channel. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Trap / Random telegraph signals / One dimensional channel / GaAs/AlGaAs / Coulomb potential |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SINGLE ELECTRON TRAPS IN A ONE DIMENSIONAL TRAPS |
| Sub Title (in English) | |
| Keyword(1) | Trap |
| Keyword(2) | Random telegraph signals |
| Keyword(3) | One dimensional channel |
| Keyword(4) | GaAs/AlGaAs |
| Keyword(5) | Coulomb potential |
| 1st Author's Name | T. Sakamoto |
| 1st Author's Affiliation | Fundamental Research Labs., NEC Corporation() |
| 2nd Author's Name | Y. Nakamura |
| 2nd Author's Affiliation | Fundamental Research Labs., NEC Corporation |
| 3rd Author's Name | S.W. Hwang |
| 3rd Author's Affiliation | Fundamental Research Labs., NEC Corporation |
| 4th Author's Name | K. Nakamura |
| 4th Author's Affiliation | Fundamental Research Labs., NEC Corporation |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 7 |
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