| Presentation | 1995/4/21 Conductance Oscillations in a Split-Gate MOSFET Fabricated on an SOI Substrate Hiroki Ishikuro, Toshiro Hiramoto, Hiroyuki Fujita, Toshiaki Ikoma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A very narrow, short channel n-MOSFET has been fabricated utilizing the electrostatic potential confinement by a split-gate on an SOI substrate and it's electrical transport properties have been investigated at very low temperatures (≤4.2 K). Conductance as a function of the split-gate voltage exhibits oscillations near the pinchoff voltage. The oscillations consist of a periodic component and aperiodic components. Current-voltage (I_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Coulomb blockade / single electron tunneling / hopping transport / split-gate / SOI / MOS |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Conductance Oscillations in a Split-Gate MOSFET Fabricated on an SOI Substrate |
| Sub Title (in English) | |
| Keyword(1) | Coulomb blockade |
| Keyword(2) | single electron tunneling |
| Keyword(3) | hopping transport |
| Keyword(4) | split-gate |
| Keyword(5) | SOI |
| Keyword(6) | MOS |
| 1st Author's Name | Hiroki Ishikuro |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo() |
| 2nd Author's Name | Toshiro Hiramoto |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 3rd Author's Name | Hiroyuki Fujita |
| 3rd Author's Affiliation | Institute of Industrial Science, University of Tokyo |
| 4th Author's Name | Toshiaki Ikoma |
| 4th Author's Affiliation | T.I. Tsukuba R&D Center Ltd. |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 5 |
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