Presentation 1995/4/21
Nano-pattern transfer using an image reversal process with ECR plasma oxidation and its application to fabrication of Si quantum wire
Kenji Kurihara, Kazumi Iwadate, Hideo Namatsu, Masao Nagase, Kastumi Murase,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new image reversal process has been developed for electron beam nanolithography. This process is based on Si oxidation with ECR oxygen plasma through the opening of resist patterns. After the Si oxidation and resist removal, Si is etched with highly selective Si etching over SiO_2 such as Cl_2-based ECR plasma or KOH anisotropic etching. This image reversal process has achieved 10-nm scale Si line and dot patterns.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ECR / Plasma oxidation / Electron beam exposure / nanofabrication / image reversal
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Conference Information
Committee SDM
Conference Date 1995/4/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Nano-pattern transfer using an image reversal process with ECR plasma oxidation and its application to fabrication of Si quantum wire
Sub Title (in English)
Keyword(1) ECR
Keyword(2) Plasma oxidation
Keyword(3) Electron beam exposure
Keyword(4) nanofabrication
Keyword(5) image reversal
1st Author's Name Kenji Kurihara
1st Author's Affiliation NTT LSI Laboratories()
2nd Author's Name Kazumi Iwadate
2nd Author's Affiliation NTT LSI Laboratories
3rd Author's Name Hideo Namatsu
3rd Author's Affiliation NTT LSI Laboratories
4th Author's Name Masao Nagase
4th Author's Affiliation NTT LSI Laboratories
5th Author's Name Kastumi Murase
5th Author's Affiliation NTT LSI Laboratories
Date 1995/4/21
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Volume (vol) vol.95
Number (no) 10
Page pp.pp.-
#Pages 8
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