| Presentation | 1995/4/21 Valence-band discontinuity at InAs nanocrystal/Se-terminated GaAs hetero - interface Yoshio Watanabe, Fumihiko Maeda, Takanori Kiyokura, Masaharu Oshima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied InAs epitaxial nanocrystal growth by MBE on a Se-terminated GaAs surface as well as on an As-stabilized GaAs surface by in situ synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy to evaluate the valence-band discontinuity at hetero-interfaces. Our measurements yield valence-band offset values of -0.02 eV for InAs on As-stabilized GaAs and -0.18 eV for InAs on Se-terminated GaAs. This result implies that hole carriers can be confined in InAs nanocrystals on Se-terminated GaAs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | nanocrystal / selenium-treatment / synchrotron radiation / photoelectron spectroscopy / band discontinuity |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Valence-band discontinuity at InAs nanocrystal/Se-terminated GaAs hetero - interface |
| Sub Title (in English) | |
| Keyword(1) | nanocrystal |
| Keyword(2) | selenium-treatment |
| Keyword(3) | synchrotron radiation |
| Keyword(4) | photoelectron spectroscopy |
| Keyword(5) | band discontinuity |
| 1st Author's Name | Yoshio Watanabe |
| 1st Author's Affiliation | NTT Interdisciplinary Research Laboratories() |
| 2nd Author's Name | Fumihiko Maeda |
| 2nd Author's Affiliation | NTT Interdisciplinary Research Laboratories |
| 3rd Author's Name | Takanori Kiyokura |
| 3rd Author's Affiliation | NTT Interdisciplinary Research Laboratories |
| 4th Author's Name | Masaharu Oshima |
| 4th Author's Affiliation | NTT Interdisciplinary Research Laboratories |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 6 |
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