| Presentation | 1995/4/21 The Effect on the Tunnel Oxide Characteristics of Insulator Films on the Gate Electrode M. Ushiyama, H. Miura, H. Yashima, T. Adachi, T. Nishimoto, K. Komori, M. Katoh, H. Kume, Y. Ohji, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the effect on the tunnel oxide characteristics of insulator films on the gate electrode. Electron traps are generated in tunnel oxides by high-temperature oxidation of a Si_3N_4 film in an ONO film on the gate electrode. Microscopic Raman spectroscopy and wafer bending showed that the oxidation of the Si_3N_4 film generates stronger tensile stress in poly-Si gate electrode. The stress is thought to weaken the bonds of tunnel oxides, which may generate electron traps. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | tunnel oxide / electron trap / mechnical stress / ONO film / high-electric field endurance |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Effect on the Tunnel Oxide Characteristics of Insulator Films on the Gate Electrode |
| Sub Title (in English) | |
| Keyword(1) | tunnel oxide |
| Keyword(2) | electron trap |
| Keyword(3) | mechnical stress |
| Keyword(4) | ONO film |
| Keyword(5) | high-electric field endurance |
| 1st Author's Name | M. Ushiyama |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi Ltd.() |
| 2nd Author's Name | H. Miura |
| 2nd Author's Affiliation | Mechanical Engineering Research Laboratory, Hitachi Ltd. |
| 3rd Author's Name | H. Yashima |
| 3rd Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 4th Author's Name | T. Adachi |
| 4th Author's Affiliation | Semiconductor & integrated Circuits Division, Hitachi Ltd. |
| 5th Author's Name | T. Nishimoto |
| 5th Author's Affiliation | Semiconductor & integrated Circuits Division, Hitachi Ltd. |
| 6th Author's Name | K. Komori |
| 6th Author's Affiliation | Semiconductor & integrated Circuits Division, Hitachi Ltd. |
| 7th Author's Name | M. Katoh |
| 7th Author's Affiliation | Semiconductor & integrated Circuits Division, Hitachi Ltd. |
| 8th Author's Name | H. Kume |
| 8th Author's Affiliation | Central Research Laboratory, Hitachi Ltd. |
| 9th Author's Name | Y. Ohji |
| 9th Author's Affiliation | Semiconductor & integrated Circuits Division, Hitachi Ltd. |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 7 |
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