| Presentation | 1995/4/21 Interfacial reactions in the Zr-Si system observed by in-situ TEM Hiroyuki Tanaka, Masao Okihara, Norio Hirashita, Toyohiko Konno, Robert Sinclair, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The interfacial Reactions in the Zr/Si system have been studied by in-situ cross section TEM including high resolution mode, EDS, and nano-beam electron diffraction. The amorphous interlayer at the Zr/Si interface grows during annealing at 400℃. The growth of the amorphous layer consists of three stages ; a rapid increase in the early stage, a gradual increase in the intermediate metastable stage, and saturation in the final stage. Annealing at 500℃ creates a ZrSi_2 layer in the C49 structure with a <010> orientation upon the (100) Si substrate at the amorphous layer/Si interface. The ZrSi_2 is found to grow layer-by layer into the Si substrate via a ledge mechanism. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | in-situ TEM / Zr/Si / amorphous interlayer / ZrSi_2 / C49 structure / layer-by-layer |
| Paper # | |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interfacial reactions in the Zr-Si system observed by in-situ TEM |
| Sub Title (in English) | |
| Keyword(1) | in-situ TEM |
| Keyword(2) | Zr/Si |
| Keyword(3) | amorphous interlayer |
| Keyword(4) | ZrSi_2 |
| Keyword(5) | C49 structure |
| Keyword(6) | layer-by-layer |
| 1st Author's Name | Hiroyuki Tanaka |
| 1st Author's Affiliation | VLSI R&D Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Masao Okihara |
| 2nd Author's Affiliation | VLSI R&D Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Norio Hirashita |
| 3rd Author's Affiliation | VLSI R&D Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Toyohiko Konno |
| 4th Author's Affiliation | Institute for Materials Research, Tohoku University |
| 5th Author's Name | Robert Sinclair |
| 5th Author's Affiliation | Department of Materials Science and Engineering, Stanford University |
| Date | 1995/4/21 |
| Paper # | |
| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |