| Presentation | 1995/4/21 Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy Josep L. Alay, Masatoshi Fukuda, Claes Bjorkman, Kazuyuki Nakagawa, Shin Yokoyama, Masataka Hirose, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The valence band structure of the ultra-thin SiO_2/Si(111) interface has been studied by high resolution x-ray photoelectron spectroscopy. The absence of Si^<2+> derived from the deconvolution of the Si 2p core-level peak implies an atomically flat interface mainly formed by Si^<1+>. The energy shifts found in the Si 2p and O 1s core-level peaks are induced by charging effects and have been corrected. The valence bands for the ultra-thin (1.8-3.7nm thick) SiO_2 are obtained after subtracting the substrate Si contribution from the measured spectrum and by taking into account charging effects. The valence band alignment of the ultra-thin SiO_2/Si(111) interfaces is found to be 4.36±0.10eV regardless of oxide tickness. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ultra-thin SiO_2/Si(111) interface / XPS / oxide thickness / charging effect / valence band / band alignment |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | ultra-thin SiO_2/Si(111) interface |
| Keyword(2) | XPS |
| Keyword(3) | oxide thickness |
| Keyword(4) | charging effect |
| Keyword(5) | valence band |
| Keyword(6) | band alignment |
| 1st Author's Name | Josep L. Alay |
| 1st Author's Affiliation | Research Center for Integrated Systems, Hiroshima University() |
| 2nd Author's Name | Masatoshi Fukuda |
| 2nd Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 3rd Author's Name | Claes Bjorkman |
| 3rd Author's Affiliation | Research Center for Integrated Systems, Hiroshima University |
| 4th Author's Name | Kazuyuki Nakagawa |
| 4th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| 5th Author's Name | Shin Yokoyama |
| 5th Author's Affiliation | Research Center for Integrated Systems, Hiroshima University |
| 6th Author's Name | Masataka Hirose |
| 6th Author's Affiliation | Department of Electrical Engineering, Hiroshima University |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 6 |
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