| Presentation | 1995/4/21 LED Fabrication and Investigation by Impurity Doping into Porous Si L. Zhang, T. Sakai, T. Suzuki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Impurity doping (boron and phosphorous) into porous silicon(PS) has been carried out succesfully while retaining the fine structures of PS. This makes it possible to control the PS structures and the impurity state independently. The PS resistivity was reduced(which infered by the ITO/PS heterojuncton's series resistance being reduced by 2 order of magnitude), and by converting one part of the layer's type, a highly uniform PS homojunction pn diode was obtained which shows good rectifying characteristics. Visible light was observed and, using a photodiode, an onset voltage of 0.66V was obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Porous Si / quantum size effect / EL / PL / doping / pn junction |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1995/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | LED Fabrication and Investigation by Impurity Doping into Porous Si |
| Sub Title (in English) | |
| Keyword(1) | Porous Si |
| Keyword(2) | quantum size effect |
| Keyword(3) | EL |
| Keyword(4) | PL |
| Keyword(5) | doping |
| Keyword(6) | pn junction |
| 1st Author's Name | L. Zhang |
| 1st Author's Affiliation | Toshiba Corp., Research and Developement Center() |
| 2nd Author's Name | T. Sakai |
| 2nd Author's Affiliation | Toshiba Corp., Research and Developement Center |
| 3rd Author's Name | T. Suzuki |
| 3rd Author's Affiliation | Toshiba Corp., Research and Developement Center |
| Date | 1995/4/21 |
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| Volume (vol) | vol.95 |
| Number (no) | 10 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |