Presentation 1995/4/21
Investigation of Porous Silicon Electroluminescence during Anodic Oxidation and its micro-structure analysis
Tadashi Sakai, Taketoshi Suzuki, Li Zhang,
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Abstract(in English) Porous silicon (PS) electroluminescence (EL) and photoluminescence (PL) during anodic oxidation have been analyzed simultaneously at first time. As a result, PS made under illumination was found to have an isolated powder like nano-structure especially in the surface region. Therefore, the wavelength of PL did not agree with the EL which is generated from the inner like network structure. On the other hand, PS made in dark condition has good network like nano-structure through the substrate interface to the top surface, and the PL peak agreed with the EL. On the bases of this network structure, EL efficiency has been developed at a maximum of 0.35% by applying pre-anodic oxidation and HF etching technique.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) porous silicon / anodic oxidation / EL / PL / emission efficiency / silicon quantum wire
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Committee SDM
Conference Date 1995/4/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of Porous Silicon Electroluminescence during Anodic Oxidation and its micro-structure analysis
Sub Title (in English)
Keyword(1) porous silicon
Keyword(2) anodic oxidation
Keyword(3) EL
Keyword(4) PL
Keyword(5) emission efficiency
Keyword(6) silicon quantum wire
1st Author's Name Tadashi Sakai
1st Author's Affiliation Research and Development Center, Toshiba Corporation()
2nd Author's Name Taketoshi Suzuki
2nd Author's Affiliation Research and Development Center, Toshiba Corporation
3rd Author's Name Li Zhang
3rd Author's Affiliation Research and Development Center, Toshiba Corporation
Date 1995/4/21
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Volume (vol) vol.95
Number (no) 10
Page pp.pp.-
#Pages 8
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