Presentation 1996/5/23
A 0.54μm^2 Self-Aligned, HSG Floating Gate Cell(SAHF Cell) for 256Mbit Flash Memories
H. Shirai, T. Kubota, I. Honma, H. Watanabe, H. Ono, T. Okazawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A 0.54μm^2 Self-Aligned memory cell with Hemispherical-grained (HSG) poly-Si Floating gate (SAHF cell) has been developed for 256Mbit flash memories. Applying hemispherical-grained (HSG) poly-Si to floating gate extends the upper surface area double that of the floating gate in comparison with the conventional ones. A high capacitive-coupling ratio of 0.8 and buried n^+ diffusion layers which are self-aligned to the floating gate poly-Si are realized simultaneously with a simple cell structure and fewer process steps.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Flash memory / HSGI / ONO / Self-Align
Paper # SDM96-25
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Conference Information
Committee SDM
Conference Date 1996/5/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 0.54μm^2 Self-Aligned, HSG Floating Gate Cell(SAHF Cell) for 256Mbit Flash Memories
Sub Title (in English)
Keyword(1) Flash memory
Keyword(2) HSGI
Keyword(3) ONO
Keyword(4) Self-Align
1st Author's Name H. Shirai
1st Author's Affiliation NEC Corporation()
2nd Author's Name T. Kubota
2nd Author's Affiliation NEC Corporation
3rd Author's Name I. Honma
3rd Author's Affiliation NEC Corporation
4th Author's Name H. Watanabe
4th Author's Affiliation NEC Corporation
5th Author's Name H. Ono
5th Author's Affiliation NEC Corporation
6th Author's Name T. Okazawa
6th Author's Affiliation NEC Corporation
Date 1996/5/23
Paper # SDM96-25
Volume (vol) vol.96
Number (no) 63
Page pp.pp.-
#Pages 8
Date of Issue