Presentation 1996/5/23
A Novel Circuit Technology with TIS for Gigabit DRAM's
Shigeyoshi Watanabe, Katsuhiko Hieda, Kazumasa Sunouchi, Fumio Horiguchi, Kazunori Ohuchi, Hisashi Hara, Fujio Masuoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel circuit technology with TIS for Gbit DRAM's has been described. Using the TIS for all the transistors within a chip, by 1.5 generation longer TDDB lifetime of transistor can be successfully achieved compared with a DRAM composed of the conventional planar transistor without sacrificing the chip size and power dissipation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Gigabit / DRAM / TIS / Reliability
Paper # SDM96-24
Date of Issue

Conference Information
Committee SDM
Conference Date 1996/5/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Novel Circuit Technology with TIS for Gigabit DRAM's
Sub Title (in English)
Keyword(1) Gigabit
Keyword(2) DRAM
Keyword(3) TIS
Keyword(4) Reliability
1st Author's Name Shigeyoshi Watanabe
1st Author's Affiliation Research and Development Center, Toshiba Corporation()
2nd Author's Name Katsuhiko Hieda
2nd Author's Affiliation Toshiba c/o IBM East Fishkill Facility
3rd Author's Name Kazumasa Sunouchi
3rd Author's Affiliation Research and Development Center, Toshiba Corporation
4th Author's Name Fumio Horiguchi
4th Author's Affiliation Semiconductor Group, Toshiba Corporation
5th Author's Name Kazunori Ohuchi
5th Author's Affiliation Research and Development Center, Toshiba Corporation
6th Author's Name Hisashi Hara
6th Author's Affiliation Research and Development Center, Toshiba Corporation
7th Author's Name Fujio Masuoka
7th Author's Affiliation Research Institute of Electrical Communication, Tohoku University
Date 1996/5/23
Paper # SDM96-24
Volume (vol) vol.96
Number (no) 63
Page pp.pp.-
#Pages 7
Date of Issue