| Presentation | 1996/5/23 Suppression Method of Floating Body Effects and Reliability of Fully Depleted MOSFETs/SIMOX Toshiaki Tsuchiya, Terukazu Ohno, Satoshi Tazawa, Masaaki Tomizawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Fully-depleted MOSFETs/SIMOX, which do not need body contacts to fix the body potential, are very promising devices for future low-energy high-speed LSIs beyond quarter-micron generation. However, it is essential to suppress parasitic bipolar action in fully-depleted devices for practical use in LSIs. In this report, a new suppression method of parasitic bipolar action is proposed, which uses recombination centers induced by ion implantation. By using a 2-D device simulator, the effects of recombination centers are analyzed, and an effective position to set recombination centers is clarified. Moreover, the effectiveness of the new method is experimentally verified using Ar ion-implantation. It is shown that the new method is also effective to improve hot-carrier reliability, because a hot-carrier degradation mode peculiar to MOSFETs/SOI is suppressed by the method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SOI / SIMOX / MOSFET / Fully Depleted / Floating body effect / Reliability |
| Paper # | SDM96-23 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/5/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression Method of Floating Body Effects and Reliability of Fully Depleted MOSFETs/SIMOX |
| Sub Title (in English) | |
| Keyword(1) | SOI |
| Keyword(2) | SIMOX |
| Keyword(3) | MOSFET |
| Keyword(4) | Fully Depleted |
| Keyword(5) | Floating body effect |
| Keyword(6) | Reliability |
| 1st Author's Name | Toshiaki Tsuchiya |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Terukazu Ohno |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | Satoshi Tazawa |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| 4th Author's Name | Masaaki Tomizawa |
| 4th Author's Affiliation | NTT LSI Laboratories |
| Date | 1996/5/23 |
| Paper # | SDM96-23 |
| Volume (vol) | vol.96 |
| Number (no) | 63 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |