| Presentation | 1996/5/23 Redistribution of in-situ doped or ion-implanted nitrogen in polysilicon and nitrogen pile-up at poly-Si/SiO_2 interface Satoshi Nakayama, Tetushi Sakai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports a secondary ion mass spectroscopy analysis of the redistribution of in-situ doped or implanted nitrogen in polysilicon and the segregation of nitrogen at the polysilicon/SiO_2 interfaces during heat treatment. When nitrogen-doped polysilicon is subjected to heat treatment at temperature above 800℃, nitrogen diffuses to the poly-Si/SiO_2 interface and surface, and piles up there. Some of the nitrogen is immobile when the concentration is above a particular threshold concentration. This immobile nitrogen becomes mobile and diffuses during annealing. The threshold concentration for nitrogen diffusion depends on the grain size. There is a limit to how much nitrogen segregates to the interface. The limit depends not on the initial amount of nitrogen in the polysilicon, but only on the annealing temperature. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | polysilicon / nitrogen-doped silicon / nitrogen / diffusion / segregation |
| Paper # | SDM96-22 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/5/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Redistribution of in-situ doped or ion-implanted nitrogen in polysilicon and nitrogen pile-up at poly-Si/SiO_2 interface |
| Sub Title (in English) | |
| Keyword(1) | polysilicon |
| Keyword(2) | nitrogen-doped silicon |
| Keyword(3) | nitrogen |
| Keyword(4) | diffusion |
| Keyword(5) | segregation |
| 1st Author's Name | Satoshi Nakayama |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Tetushi Sakai |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| Date | 1996/5/23 |
| Paper # | SDM96-22 |
| Volume (vol) | vol.96 |
| Number (no) | 63 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |