Presentation	1996/5/23 Relationship between charge-to-breakdown and time-to-breakdown of the gate oxide damaged by plasma processing Koji Eriguchi, Takayuki Yamada, Yukiko Kosaka, Kenzo Hatada,
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Abstract(in English)	The relationship between the charge-to-breakdown under constant-current injection (Q_) and the time-to-breakdown under constant-voltage stress (t_) is investigated for the gate oxide damaged by plasma processing such as the antenna effect. It is found that although the Q_ of the damaged oxide monotonously decreases with antenna ratio(=exposed antenna surface area/gate area), the t_ does not decreases in a certain antenna ratio region. The difference in the degradation rate of Q_ and t_ of the damaged oxides is successfully explained by taking into account the time dependence of gate current density under constant-voltage stress J(t) and J-dependence of Q_. Also the correlation between the plasma-induced degradation of t_ and that of the transconductance in nMOSET is studied.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	antenna effect / gate oxide / charge-to-breakdown / time-to-breakdown / plasma
Paper #	SDM96-21
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Conference Information
Committee	SDM
Conference Date	1996/5/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Relationship between charge-to-breakdown and time-to-breakdown of the gate oxide damaged by plasma processing
Sub Title (in English)
Keyword(1)	antenna effect
Keyword(2)	gate oxide
Keyword(3)	charge-to-breakdown
Keyword(4)	time-to-breakdown
Keyword(5)	plasma
1st Author's Name	Koji Eriguchi
1st Author's Affiliation	Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.()
2nd Author's Name	Takayuki Yamada
2nd Author's Affiliation	Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
3rd Author's Name	Yukiko Kosaka
3rd Author's Affiliation	Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
4th Author's Name	Kenzo Hatada
4th Author's Affiliation	Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.
Date	1996/5/23
Paper #	SDM96-21
Volume (vol)	vol.96
Number (no)	63
Page	pp.pp.-
#Pages	7
Date of Issue