Presentation	1996/5/23 Origin of Dielectric Breakdown and Stress-induced Leakage Current in Ultra-thin Silicondioxide Hideki Satake, Naoki Yasuda, Shin-ichi Takagi, Akira Toriumi,
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Abstract(in English)	The origin of dielectric breakdown and of tunneling site generation for stress-induced leakage current (SILC) in ultra-thin SiO_2 has been quantitatively investigated on the basis of the experimental results on temperature dependence of Q_ and SILC. It has been demonstrated, at high temperatures, that the activation energy of Q_ and SILC is the same. At low temperatures, both Q_ and SILC have weak temperature dependence. It has been discussed that dielectric breakdown and tunneling site generation for SILC have a common origin. Moreover, we demonstrate that the origin of the stressing polarity dependence of Q_ is strain gradient in SiO_2.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	gate oxides / dielectric breakdown / stress-induced leakage current / diffusion of hydrogen / strained silicon-oxygen bond / hot electron / strain gradient
Paper #	SDM96-20
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Conference Information
Committee	SDM
Conference Date	1996/5/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Origin of Dielectric Breakdown and Stress-induced Leakage Current in Ultra-thin Silicondioxide
Sub Title (in English)
Keyword(1)	gate oxides
Keyword(2)	dielectric breakdown
Keyword(3)	stress-induced leakage current
Keyword(4)	diffusion of hydrogen
Keyword(5)	strained silicon-oxygen bond
Keyword(6)	hot electron
Keyword(7)	strain gradient
1st Author's Name	Hideki Satake
1st Author's Affiliation	ULSI Research Laboratories, TOSHIBA Corporation()
2nd Author's Name	Naoki Yasuda
2nd Author's Affiliation	ULSI Research Laboratories, TOSHIBA Corporation
3rd Author's Name	Shin-ichi Takagi
3rd Author's Affiliation	ULSI Research Laboratories, TOSHIBA Corporation
4th Author's Name	Akira Toriumi
4th Author's Affiliation	ULSI Research Laboratories, TOSHIBA Corporation
Date	1996/5/23
Paper #	SDM96-20
Volume (vol)	vol.96
Number (no)	63
Page	pp.pp.-
#Pages	8
Date of Issue