Presentation 1996/5/23
Trap Generation due to Local Distortion and Impurities in Amorphous Silicon Dioxide Film
Chioko Kaneta,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The generation mechanism and the properties of charge traps due to local distortion and impurities in amorphous silicon dioxide (a-SiO_2) film are investigated employing the abinitio molecular orbital method applied to a cluster model. It is shown that a hole injected into a-SiO_2 with a stretched Si-O-Si unit is trapped at the central oxygen in the unit. The bending of the Si-O-Si unit, OH, and F impurities have no significant effects on the hole trapping. It is also shown that a hole injected into a-SiO_2 containing Cl impurity is trapped at the Cl site, causing a large displacement of the Cl atom.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Silicon / Silicon Dioxide / Trap Center / Hole / Local Distortion / Impurity
Paper # SDM96-17
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Conference Information
Committee SDM
Conference Date 1996/5/23(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Trap Generation due to Local Distortion and Impurities in Amorphous Silicon Dioxide Film
Sub Title (in English)
Keyword(1) Silicon
Keyword(2) Silicon Dioxide
Keyword(3) Trap Center
Keyword(4) Hole
Keyword(5) Local Distortion
Keyword(6) Impurity
1st Author's Name Chioko Kaneta
1st Author's Affiliation Fujitsu Laboratories Ltd.()
Date 1996/5/23
Paper # SDM96-17
Volume (vol) vol.96
Number (no) 63
Page pp.pp.-
#Pages 7
Date of Issue