Presentation | 1996/5/23 Trap Generation due to Local Distortion and Impurities in Amorphous Silicon Dioxide Film Chioko Kaneta, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The generation mechanism and the properties of charge traps due to local distortion and impurities in amorphous silicon dioxide (a-SiO_2) film are investigated employing the abinitio molecular orbital method applied to a cluster model. It is shown that a hole injected into a-SiO_2 with a stretched Si-O-Si unit is trapped at the central oxygen in the unit. The bending of the Si-O-Si unit, OH, and F impurities have no significant effects on the hole trapping. It is also shown that a hole injected into a-SiO_2 containing Cl impurity is trapped at the Cl site, causing a large displacement of the Cl atom. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Silicon / Silicon Dioxide / Trap Center / Hole / Local Distortion / Impurity |
Paper # | SDM96-17 |
Date of Issue |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 1996/5/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Trap Generation due to Local Distortion and Impurities in Amorphous Silicon Dioxide Film |
Sub Title (in English) | |
Keyword(1) | Silicon |
Keyword(2) | Silicon Dioxide |
Keyword(3) | Trap Center |
Keyword(4) | Hole |
Keyword(5) | Local Distortion |
Keyword(6) | Impurity |
1st Author's Name | Chioko Kaneta |
1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
Date | 1996/5/23 |
Paper # | SDM96-17 |
Volume (vol) | vol.96 |
Number (no) | 63 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |