| Presentation | 1996/5/23 Tunnel Oxide Reliability Improvement by Si/SiO_2 Interface Strain Relaxation with Rapid Thermal, High Temperature Steam Oxidation Hiroshi TOMITA, Yoshio OZAWA, Mamoru TAKAHASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Simultaneous improvement of tunnel oxide reliability, such as stress-induced leakage current, hole trap, electron trap and charge-to-breakdown (Qbd) characteristics, has been desired to achieve high performance of Flash Memories. In this paper, we propose a novel RTO (rapid thermal oxidation ) process to realize excellent tunnel oxide characteristics for the first time. Essence of the process is combination with rapid thermal, high temperature and diluted steam oxidation processes. As the results of Ols peak observations by X-ray Photoelectron Spectroscopy (XPS), mechanism of reliability improvement compared to the traditional steam oxidation process is expected to reduce weak Si-O bonds and/or imperfections of Si-O network near Si/SiO_2 interface by viscous relaxation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tunnel Oxide / Interface Strain Relaxation / High Temperature Dilute Wet Oxidation |
| Paper # | SDM96-16 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/5/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Tunnel Oxide Reliability Improvement by Si/SiO_2 Interface Strain Relaxation with Rapid Thermal, High Temperature Steam Oxidation |
| Sub Title (in English) | |
| Keyword(1) | Tunnel Oxide |
| Keyword(2) | Interface Strain Relaxation |
| Keyword(3) | High Temperature Dilute Wet Oxidation |
| 1st Author's Name | Hiroshi TOMITA |
| 1st Author's Affiliation | Process Engineering Lab., TOSHIBA Corporation() |
| 2nd Author's Name | Yoshio OZAWA |
| 2nd Author's Affiliation | Process Engineering Lab., TOSHIBA Corporation |
| 3rd Author's Name | Mamoru TAKAHASHI |
| 3rd Author's Affiliation | Environmental Engineering Lab., TOSHIBA Corporation |
| Date | 1996/5/23 |
| Paper # | SDM96-16 |
| Volume (vol) | vol.96 |
| Number (no) | 63 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |