| Presentation | 1997/1/24 A New Cobalt Salicide Technology for 0.15μm CMOS Device Ken Inoue, Kaoru Mikagi, Hitoshi Abiko, Takamaro Kikkawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new cobalt salicide technology using high-temperature sputtering and in-situ vacuum annealing has been developed. Sputtering at an elevated temperature and annealing without a break of vacuum were shown to promote in-situ silicidation and hence, suppress oxidation of the Co film. By using this technology, no linewidth dependence was observed for the sheet resistance down to 0.15μm wide gate electrode. The high temperature sputtering process was also observed to lead to the growth of epitaxial CoSi_2 thin films during subsequent anneals. A significant improvement in thermal stability was observed process and was attributed to the stability of the epitaxial silicide interfaces. When Co high temperature sputtering was performed, a very uniform and directional grain of CoSi_x can be formed. Consequently, epitaxial CoSi_2 is grown. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CoSi_2 / salicide / high-temperature sputtering / in-situ vacuum annealing / epitaxial growth / growth / thermal stability |
| Paper # | SDM96-212 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A New Cobalt Salicide Technology for 0.15μm CMOS Device |
| Sub Title (in English) | |
| Keyword(1) | CoSi_2 |
| Keyword(2) | salicide |
| Keyword(3) | high-temperature sputtering |
| Keyword(4) | in-situ vacuum annealing |
| Keyword(5) | epitaxial growth |
| Keyword(6) | growth |
| Keyword(7) | thermal stability |
| 1st Author's Name | Ken Inoue |
| 1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation() |
| 2nd Author's Name | Kaoru Mikagi |
| 2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 3rd Author's Name | Hitoshi Abiko |
| 3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 4th Author's Name | Takamaro Kikkawa |
| 4th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| Date | 1997/1/24 |
| Paper # | SDM96-212 |
| Volume (vol) | vol.96 |
| Number (no) | 498 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |