| Presentation | 1997/1/24 Process Technology for Chemical Vapor Deposition of Copper Nobuyoshi Awaya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Copper CVD is promising for key technology for copper interconnection process due its high step coverage and low processing temperature and damege-less process. The residual challenges of copper CVD are deposition rate, precursor consumption efficiency and crystallographic quality of deposited film. This paper describes the guideline for process optimization to overcome these technical drawbacks of CVD technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LSI / Multi-level interconnections / copper / copper interconnection / chemical vapor deposition |
| Paper # | SDM96-210 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Process Technology for Chemical Vapor Deposition of Copper |
| Sub Title (in English) | |
| Keyword(1) | LSI |
| Keyword(2) | Multi-level interconnections |
| Keyword(3) | copper |
| Keyword(4) | copper interconnection |
| Keyword(5) | chemical vapor deposition |
| 1st Author's Name | Nobuyoshi Awaya |
| 1st Author's Affiliation | NTT System Electronics Laboratories() |
| Date | 1997/1/24 |
| Paper # | SDM96-210 |
| Volume (vol) | vol.96 |
| Number (no) | 498 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |