| Presentation | 1997/1/24 A Novel TiN/Ti Contact Plug Technology for Gigabit Scale DRAM using Ti-PECVD and TiN-LPCVD K Ohto, K Urabe, T Taguwa, S Chikaki, T Kikkawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new TiN/Ti contact plug technology for Gigabit-scale DRAM was developed by use of Ti plasma-enhanced chemical vapor deposition (PECVD) and TiN low-pressure chemical vapor deposition (LPCVD). When PECVD-Ti film was deposited at greater than 545℃, in-situ Ti silicidation occurred on Si. The step coverage of LPCVD-TiN film was 100% in fine contact up to the aspect ratio of 7. By using this technology, low contact resistances and junction leakage currents were obtained for 0.25 μm contact holes with aspect ratio of 6. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ti / TiSi_2 / TiN / CVD / Contact / DRAM |
| Paper # | SDM96-206 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1997/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Novel TiN/Ti Contact Plug Technology for Gigabit Scale DRAM using Ti-PECVD and TiN-LPCVD |
| Sub Title (in English) | |
| Keyword(1) | Ti |
| Keyword(2) | TiSi_2 |
| Keyword(3) | TiN |
| Keyword(4) | CVD |
| Keyword(5) | Contact |
| Keyword(6) | DRAM |
| 1st Author's Name | K Ohto |
| 1st Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation() |
| 2nd Author's Name | K Urabe |
| 2nd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 3rd Author's Name | T Taguwa |
| 3rd Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 4th Author's Name | S Chikaki |
| 4th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| 5th Author's Name | T Kikkawa |
| 5th Author's Affiliation | ULSI Device Development Laboratories, NEC Corporation |
| Date | 1997/1/24 |
| Paper # | SDM96-206 |
| Volume (vol) | vol.96 |
| Number (no) | 498 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |