Presentation 1996/12/5
Smoothing of SiC surface by Gas Cluster Ion Beams
N. Toyoda, H. Kitani, J. Matsuo, I. Yamada,
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Abstract(in English) SiC and diamond thin films which are considered as suitable material for membrane of X-ray mask were irradiated with Ar cluster ion beams. The surface roughness dramatically decreased by the Ar cluster ion irradiation, and there was no roughening mechanism. From the study of angular dependence of the surface roughness, the normal incidence is most effective for the surface smoothing by Ar cluster ion beam By using SF_6 as a reactive gas, the sputtering yield of Si and SiC become one order of magnitude higher than that of Ar cluster ion.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) cluster / SiC / diamond / smoothing
Paper # SDM96-155
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Conference Information
Committee SDM
Conference Date 1996/12/5(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Smoothing of SiC surface by Gas Cluster Ion Beams
Sub Title (in English)
Keyword(1) cluster
Keyword(2) SiC
Keyword(3) diamond
Keyword(4) smoothing
1st Author's Name N. Toyoda
1st Author's Affiliation Ion Beam Engineering Experimental Laboratory, Kyoto University()
2nd Author's Name H. Kitani
2nd Author's Affiliation Ion Beam Engineering Experimental Laboratory, Kyoto University
3rd Author's Name J. Matsuo
3rd Author's Affiliation Ion Beam Engineering Experimental Laboratory, Kyoto University
4th Author's Name I. Yamada
4th Author's Affiliation Ion Beam Engineering Experimental Laboratory, Kyoto University
Date 1996/12/5
Paper # SDM96-155
Volume (vol) vol.96
Number (no) 395
Page pp.pp.-
#Pages 7
Date of Issue