Presentation | 1996/12/5 Smoothing of SiC surface by Gas Cluster Ion Beams N. Toyoda, H. Kitani, J. Matsuo, I. Yamada, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | SiC and diamond thin films which are considered as suitable material for membrane of X-ray mask were irradiated with Ar cluster ion beams. The surface roughness dramatically decreased by the Ar cluster ion irradiation, and there was no roughening mechanism. From the study of angular dependence of the surface roughness, the normal incidence is most effective for the surface smoothing by Ar cluster ion beam By using SF_6 as a reactive gas, the sputtering yield of Si and SiC become one order of magnitude higher than that of Ar cluster ion. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | cluster / SiC / diamond / smoothing |
Paper # | SDM96-155 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1996/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Smoothing of SiC surface by Gas Cluster Ion Beams |
Sub Title (in English) | |
Keyword(1) | cluster |
Keyword(2) | SiC |
Keyword(3) | diamond |
Keyword(4) | smoothing |
1st Author's Name | N. Toyoda |
1st Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University() |
2nd Author's Name | H. Kitani |
2nd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University |
3rd Author's Name | J. Matsuo |
3rd Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University |
4th Author's Name | I. Yamada |
4th Author's Affiliation | Ion Beam Engineering Experimental Laboratory, Kyoto University |
Date | 1996/12/5 |
Paper # | SDM96-155 |
Volume (vol) | vol.96 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |