Presentation | 1996/12/5 Electron Mobility in 6H-(0001)SiC Inversion Layers K. MASAKI, C. HAMAGUCHI, W. Xie, M.R. Melloch, J.A. Cooper, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effective field and temperature dependence of electron mobility in 6H-(0001)SiC inversion layers are investigated by using channel conductance measurements. A new technique is developed to extract the electron mobility from the MOSFET drain current accurately. The peak electron mobility about 42(cm^2/V.sec) at room temperature. Calculated results, which are given based on an interaction of two dimensional electron gas with acoustic phonons, are shown for the effective field and temperature dependence of electron mobility. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 6H-SiC MOSFET / electron mobility / 2DEG / acoustic phonon |
Paper # | SDM96-154 |
Date of Issue |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 1996/12/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electron Mobility in 6H-(0001)SiC Inversion Layers |
Sub Title (in English) | |
Keyword(1) | 6H-SiC MOSFET |
Keyword(2) | electron mobility |
Keyword(3) | 2DEG |
Keyword(4) | acoustic phonon |
1st Author's Name | K. MASAKI |
1st Author's Affiliation | Anan College() |
2nd Author's Name | C. HAMAGUCHI |
2nd Author's Affiliation | Osaka University |
3rd Author's Name | W. Xie |
3rd Author's Affiliation | Purdue University |
4th Author's Name | M.R. Melloch |
4th Author's Affiliation | Purdue University |
5th Author's Name | J.A. Cooper |
5th Author's Affiliation | Purdue University |
Date | 1996/12/5 |
Paper # | SDM96-154 |
Volume (vol) | vol.96 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |