Presentation 1996/12/5
Electron Mobility in 6H-(0001)SiC Inversion Layers
K. MASAKI, C. HAMAGUCHI, W. Xie, M.R. Melloch, J.A. Cooper,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Effective field and temperature dependence of electron mobility in 6H-(0001)SiC inversion layers are investigated by using channel conductance measurements. A new technique is developed to extract the electron mobility from the MOSFET drain current accurately. The peak electron mobility about 42(cm^2/V.sec) at room temperature. Calculated results, which are given based on an interaction of two dimensional electron gas with acoustic phonons, are shown for the effective field and temperature dependence of electron mobility.
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Keyword(in English) 6H-SiC MOSFET / electron mobility / 2DEG / acoustic phonon
Paper # SDM96-154
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Conference Information
Committee SDM
Conference Date 1996/12/5(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electron Mobility in 6H-(0001)SiC Inversion Layers
Sub Title (in English)
Keyword(1) 6H-SiC MOSFET
Keyword(2) electron mobility
Keyword(3) 2DEG
Keyword(4) acoustic phonon
1st Author's Name K. MASAKI
1st Author's Affiliation Anan College()
2nd Author's Name C. HAMAGUCHI
2nd Author's Affiliation Osaka University
3rd Author's Name W. Xie
3rd Author's Affiliation Purdue University
4th Author's Name M.R. Melloch
4th Author's Affiliation Purdue University
5th Author's Name J.A. Cooper
5th Author's Affiliation Purdue University
Date 1996/12/5
Paper # SDM96-154
Volume (vol) vol.96
Number (no) 395
Page pp.pp.-
#Pages 8
Date of Issue