| Presentation | 1996/12/5 Breakdown mechanism of gate oxide T. Tomita, H. Utsunomiya, K. Umeda, K. Taniguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We carried out substrate hot carrier injection into gate oxides with thickness of 5～10nm to investigate oxide breakdown mechanism. Hot electron injection generates substantial number of electron traps in the oxide which are caused by momentum transfer of high energy electrons to the oxide network. Quasi-oxide breakdown occurs when a chain consisting of the generated electron traps reaches from the SiO_2/substrate interface to the gate electrode. On the other hand, hot hole injection creates small defective current paths through which electron current flows. The electron current induced by hot hole injection triggers gate oxide breakdown due to Joule heating while hole current has little effect on oxide breakdown. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon dioxide / oxide breakdown / substrate hot carrier injection / FN injection |
| Paper # | SDM96-153 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1996/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Breakdown mechanism of gate oxide |
| Sub Title (in English) | |
| Keyword(1) | silicon dioxide |
| Keyword(2) | oxide breakdown |
| Keyword(3) | substrate hot carrier injection |
| Keyword(4) | FN injection |
| 1st Author's Name | T. Tomita |
| 1st Author's Affiliation | Graduate School of Engineering, Osaka University() |
| 2nd Author's Name | H. Utsunomiya |
| 2nd Author's Affiliation | Graduate School of Engineering, Osaka University |
| 3rd Author's Name | K. Umeda |
| 3rd Author's Affiliation | Central Research Laboratory, Hitachi, Ltd. |
| 4th Author's Name | K. Taniguchi |
| 4th Author's Affiliation | Graduate School of Engineering, Osaka University |
| Date | 1996/12/5 |
| Paper # | SDM96-153 |
| Volume (vol) | vol.96 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 9 |
| Date of Issue | |